Semiconductor storage device

ABSTRACT

A semiconductor storage device includes first and second planes each including a plurality of memory cells, an input/output circuit configured to receive data to be written in the memory cells from a controller, and a control circuit. The first plane includes a first sense amplifier circuit electrically connected to a first memory cell of the first plane and a first latch circuit connected in series between the input/output circuit and the first sense amplifier circuit. The control circuit is configured to carry out a first write operation on the first memory cell using the first latch circuit in response to a first command, and while carrying out the first write operation on the first memory cell, accept a second command to carry out a second write operation on a second memory cell of the second plane before use of the first latch circuit during the first write operation has ended.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2018-171686, filed Sep. 13, 2018, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor storagedevice.

BACKGROUND

A NAND type flash memory is known as one type of semiconductor storagedevice.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating the configuration of a memorysystem according to a first embodiment.

FIG. 2 is a block diagram illustrating the configuration of asemiconductor storage device according to the first embodiment.

FIG. 3 is a block diagram illustrating a plane of the semiconductorstorage device according to the first embodiment.

FIG. 4 is a circuit diagram illustrating the configuration of a memorycell array of a semiconductor storage device according to the firstembodiment.

FIG. 5 is a cross-sectional view illustrating the configuration of amemory cell array of the semiconductor storage device according to thefirst embodiment.

FIG. 6 is a block diagram illustrating the configuration of a senseamplifier module of the semiconductor storage device according to thefirst embodiment.

FIG. 7 is a circuit diagram illustrating the configuration of a senseamplifier unit of the semiconductor storage device according to thefirst embodiment.

FIG. 8 is a command sequence for a pseudo cache program operation in thesemiconductor storage device according to the first embodiment.

FIG. 9 is a command sequence for a pseudo cache program operation thatis interrupted by a read operation in the semiconductor storage deviceaccording to a first modification of the first embodiment.

FIG. 10 is a schematic diagram illustrating data movement configured toavoid data collisions in the sense amplifier unit in the semiconductorstorage device according to the first modification of the firstembodiment.

FIG. 11 is a command sequence for a pseudo cache program operation thatis interrupted by a read operation in the semiconductor storage deviceaccording to a second modification of the first embodiment.

FIG. 12 is a command sequence for a pseudo cache program operation thatis interrupted by a read operation in the semiconductor storage deviceaccording to yet another modification of the second modification of thefirst embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor storage deviceaccording to an embodiment includes a first plane and a second planeeach including a memory cell array that includes plural memory cells, aninput/output circuit configured to receive data to be written in thememory cell array from a controller, and a control circuit. The firstplane further includes a first sense amplifier circuit electricallyconnected a first memory cell of the first plane and a first latchcircuit connected in series between the input/output circuit and thefirst sense amplifier circuit. The control circuit is configured tocarry out a first write operation on the first memory cell using thefirst latch circuit in response to a first command, and while carryingout the first write operation on the first memory cell, accept a secondcommand to carry out a second write operation on a second memory cell ofthe second plane before use of the first latch circuit during the firstwrite operation has ended.

Hereinafter, embodiments will be described with reference to thedrawings. In the following description, elements having the samefunction and configuration are denoted by common reference numerals.Further, when plural elements having common reference numerals aredistinguished from each other, suffixes are added to the commonreference numerals. In addition, when such elements are not required tobe distinguished from each other, they are referred to using only thecommon reference numerals, and without any suffix attached thereto.

1. First Embodiment

A semiconductor storage device according to a first embodiment will bedescribed.

1.1 Configuration

First, descriptions will be made on the configuration of thesemiconductor storage device according to the first embodiment.

1.1.1 Overall Configuration of Memory System

FIG. 1 is a block diagram illustrating an example of the configurationof a memory system including the semiconductor storage device accordingto the first embodiment. The memory system 1 communicates with, forexample, an external host device (not illustrated). The memory system 1stores data from a host device (not illustrated) and also reads thestored data for return to the host device.

As illustrated in FIG. 1, the memory system 1 includes a memorycontroller 10 and a semiconductor storage device (e.g., NAND flashmemory) 20. The memory controller 10 receives a command from the hostdevice and controls the semiconductor storage device 20 based on thereceived command. Specifically, the memory controller 10 writes the datawhich is instructed to be written from the host device to thesemiconductor storage device 20, reads the data which is instructed tobe read from the host device from the semiconductor storage device 20,and transmits the read data to the host device. The memory controller 10is connected to the semiconductor storage device 20 by a NAND bus. Thesemiconductor storage device 20 includes plural memory cells, and storesdata in a nonvolatile manner.

The NAND bus transmits and receives the signals /CE, CLE, ALE, /WE, /RE,/WP, /RB, and I/O<7:0> according to the NAND interface standard viaindividual signal lines. The signal /CE is a chip enable signal by whichthe semiconductor storage device 20 can be enabled. The signal CLEnotifies the semiconductor storage device 20 that the signal I/O<7:0>which is transmitted to the semiconductor storage device 20 is a commandwhile the signal CLE is at the level “H (High).” The signal ALE notifiesthe semiconductor storage device 20 that the signal I/O<7:0> which istransmitted to the semiconductor storage device 20 is an address whilethe signal ALE is at the level “H.” The signal /WE instructs thesemiconductor storage device 20 to receive the signal I/O<7:0> which istransmitted to the semiconductor storage device 20 while the signal /WEis at the level “L (Low).” The signal /RE instructs the semiconductorstorage device 20 to output the signal I/O<7:0> therefrom. The signal/WP instructs the semiconductor storage device 20 to prohibit datawriting and erasing. The signal /RB indicates whether the semiconductorstorage device 20 is in a ready state (a state in which an externalcommand can be received) or a busy state (a state in which no externalcommand can be received). The signal I/O<7:0> is, for example, an 8-bitsignal. The signal I/O<7:0> represents a data entity transmitted andreceived between the semiconductor storage device 20 and the memorycontroller 10, and includes a command CMD, an address ADD, and data DAT.The data DAT includes write data and read data.

1.1.2 Configuration of Memory Controller

Next, the memory controller of the memory system according to the firstembodiment will be described with reference to FIG. 1. The memorycontroller 10 includes a processor (e.g., CPU: central processing unit)11, an internal memory (e.g., RAM: random access memory) 12, an ECC(error check and correction) circuit 13, a NAND interface circuit 14, abuffer memory 15, and a host interface circuit 16.

The processor 11 controls the entire operation of the memory controller10. The processor 11 issues a read command based on the NAND interfaceto the semiconductor storage device 20, for example, in response to adata read command received from the host device. Similarly, theprocessor 11 controls the writing and erasing operations in response toa data write command and a data erase command received from the hostdevice. The processor 11 also performs various calculations on the dataread from the semiconductor storage device 20.

The internal memory 12 is, for example, a semiconductor memory such as aDRAM (dynamic RAM) and is used as a work area of the processor 11. Theinternal memory 12 stores firmware that is executed by the processor 11to manage the semiconductor storage device 20, various managementtables, and the like.

An ECC circuit 13 performs an error detection and error correctionprocessing. More specifically, at the time of writing data, an ECC codeis generated for each set having a certain amount of data, from the datareceived from the host device. Further, at the time of reading data, ECCdecoding is performed based on the ECC code, and the presence or absenceof an error is detected. When an error is detected, the bit position ofthe error is determined and the error is corrected.

The NAND interface circuit 14 is connected to the semiconductor storagedevice 20 via the NAND bus and performs communication with thesemiconductor storage device 20. The NAND interface circuit 14 transmitsthe command CMD, the address ADD, and the write data to thesemiconductor storage device 20 according to the instruction of theprocessor 11. Further, the NAND interface circuit 14 receives the dataread from the semiconductor storage device 20.

The buffer memory 15 temporarily stores data and the like received bythe memory controller 10 from the semiconductor storage device 20 andthe host device. The buffer memory 15 is also used, for example, as astorage area that temporarily stores the data read from thesemiconductor storage device 20, calculation results for the read data,and the like.

The host interface circuit 16 is connected to the host device andperforms communication with the host device. The host interface circuit16 transfers, for example, commands and data received from the hostdevice to the processor 11 and the buffer memory 15, respectively.

1.1.3 Configuration of Semiconductor Storage Device

Next, descriptions will be made on a configuration example of thesemiconductor storage device according to the first embodiment. FIG. 2is a block diagram illustrating an example of the configuration of thesemiconductor storage device according to the first embodiment.

FIG. 2 is a block diagram illustrating an example of the configurationof the semiconductor storage device according to the first embodiment.As illustrated in FIG. 2, the semiconductor storage device 20 includes acore unit 21, an input/output circuit 22, a logic control circuit 23, aregister 24, a sequencer 25, a voltage generating circuit 26, and adriver set 27.

The core unit 21 includes, for example, 16 planes PB (PB0, PB1, . . . ,PB15). Each plane PB performs the above-described various operations ona block (not illustrated) including plural memory cell transistors (notillustrated). Specifically, for example, each plane PB performs a datawrite operation and a data read operation for a portion of memory celltransistors in a certain block, and performs a data erase operation forall the memory cell transistors in the certain block. In addition, eachof the planes PB0 to PB15 in the present embodiment has the sameconfiguration except as otherwise noted below. Details of theconfiguration of the plane PB will be described later.

The input/output circuit 22 transmits and receives signals I/O<7:0> withthe memory controller 10. The input/output circuit 22 transfers thecommand CMD and the address ADD in the signals I/O<7:0> to the register24. Further, the input/output circuit 22 transmits and receives writedata and read data (both which are generally referred to herein as dataDAT) to and from the core unit 21.

The logic control circuit 23 receives the signals /CE, CLE, ALE, /WE,/RE, and /WP from the memory controller 10. Further, the logic controlcircuit 23 transfers the signal /RB to the memory controller 10 andnotifies the state of the semiconductor storage device 20 to theoutside.

The register 24 stores the command CMD and the address ADD. The register24 transfers, for example, the address ADD and the command CMD to thesequencer 25.

The sequencer 25 receives a command set including the command CMD andthe address ADD and controls the semiconductor storage device 20 inaccordance with the sequence based on the received command set. Thesequencer 25 may output a control signal, for example, to synchronizeplural planes PB in the core unit 21, when executing a data readoperation, a data write operation, or a data erase operation.

The voltage generating circuit 26 generates a voltage necessary for adata write operation, a data read operation, and a data erase operationbased on the instruction from the sequencer 25. The voltage generatingcircuit 26 supplies the generated voltage to the driver set 27.

The driver set 27 includes plural drivers, and supplies various voltagesfrom the voltage generating circuit 26 to the core unit 21 based on theaddress from the register 24.

1.1.4 Configuration of Plane

Next, descriptions will be made on the configuration of the plane of thesemiconductor storage device according to the first embodiment.

FIG. 3 is a block diagram illustrating an example of the configurationof a plane of the semiconductor storage device according to the firstembodiment. In FIG. 3, a plane PB0 is illustrated as an example, and theother planes PB have the same configuration.

As illustrated in FIG. 3, the plane PB0 includes a memory cell array21_1, a row decoder 21_2, and a sense amplifier module 21_3.

The memory cell array 21_1 includes plural blocks BLK (BLK0, BLK1, . . .). Each block BLK is identified, for example, by block addresses thatare uniquely assigned. Also, each of the other planes PB includes blockshaving the same block addresses as the plane PB0. The blocks BLK towhich the same block address is assigned across different planes PB aredistinguished from each other by unique plane addresses. The block BLKincludes plural nonvolatile memory cell transistors associated with wordlines and bit lines (not illustrated). The block BLK is, for example, adata erase unit, and the data in the same block BLK is collectivelyerased. Each block BLK includes plural string units SU (SU0, SU1, . . .). Each string unit SU includes plural NAND strings NS. The number ofblocks in the memory cell array 21_1, the number of string units in oneblock BLK, and the number of NAND strings in one string unit SU may beset to any number.

The row decoder 21_2 selects the block BLK or the like based on theblock address among the addresses ADD stored in the register 24. Then, avoltage from the driver set 27 is transferred to the selected block BLKvia the row decoder 21_2.

The sense amplifier module 21_3 reads data by sensing the thresholdvoltage of the memory cell transistor and transfers the read data to theinput/output circuit 22 at the time of reading the data. The senseamplifier module 21_3 controls the bit line connected to the memory celltransistor at the time of writing the data into the memory celltransistor. Further, the sense amplifier module 21_3 receives the columnaddress of the address ADD from the register 24, and outputs the data ofthe column based on the column address.

1.1.5 Circuit Configuration of Memory Cell Array

Next, a circuit configuration of the memory cell array of thesemiconductor storage device according to the first embodiment will bedescribed with reference to FIG. 4. FIG. is an example of a circuitdiagram illustrating the configuration of a memory cell array of thesemiconductor storage device according to the first embodiment. FIG. 4illustrates a circuit diagram of one block BLK in the memory cell array21_1.

As illustrated in FIG. 4, each string unit SU includes a set of NANDstrings NS. Each of the NAND strings NS includes, for example, eight (8)memory cell transistors MT (MT0 to MT7), a select transistor ST1, and aselect transistor ST2. The number of the memory cell transistors MT isnot limited to eight (8), and the number may be 16, 32, 64, 96, 128,etc. and is not limited to any one particular number. The memory celltransistor MT includes a stacked gate including a control gate and acharge storage layer. Each memory cell transistor MT is connected inseries between the select transistors ST1 and ST2. Further, in thefollowing description, the term “connect” includes the case where otherconductive elements are interposed.

In a certain block BLK, the gates of the select transistors ST1 of thestring units SU0 to SU3 are connected to the select gate lines SGD0 toSGD3, respectively. The gates of the select transistors ST2 of all thestring units SU in the block BLK are commonly connected to the selectgate line SGS. The control gates of the memory cell transistors MT0 toMT7 in the same block BLK are connected to the word lines WL0 to WL7,respectively. That is, the word lines WL of the same address arecommonly connected to all the string units SU in the same block BLK, andthe select gate line SGS is commonly connected to all the string unitsSU in the same block BLK. In the meantime, the select gate line SGD isconnected to only one of the string units SU in the same block BLK.

Among the NAND strings NS arranged in a matrix form in the memory cellarray 21_1, the other end of the select transistor ST1 of the NANDstring NS in the same row is connected to any one of m bit lines BL (BL0to BL(m−1) (m is a natural number)). The bit line BL is commonlyconnected to the NAND string NS in the same column across the pluralblocks BLK.

The other end of the select transistor ST2 is connected to a source lineCELSRC. The source line CELSRC is commonly connected to plural NANDstrings NS across plural blocks BLK.

As described above, data erasing is performed collectively, for example,for the memory cell transistors MT in the same block BLK. In contrast,data reading and writing may be performed collectively for plural memorycell transistors MT commonly connected to any one word line WL in anyonestring unit SU of any one block BLK. A set of the memory celltransistors MT sharing the word line WL in the one string unit SU isreferred to, for example, as a cell unit CU. That is, the cell unit CUis a set of memory cell transistors MT for which collective writing orreading operation may be performed.

Further, one memory cell transistor MT may store, for example, one orplural bits of data. In the same cell unit CU, a set of one bit storedin the same bit position by each memory cell transistor MT is called a“page.” In other words, the term. “page” may be defined as a portion ofthe memory space formed in the set of the memory cell transistors MT inthe same cell unit CU.

In the following description, descriptions will be made on a case whereone bit of data may be stored in one memory cell transistor MT forsimplification.

Next, a cross-sectional structure of the memory cell array 21_1 will bedescribed with reference to FIG. 5. FIG. 5 illustrates an example of thecross-sectional structure of a portion of the memory cell array of thesemiconductor storage device according to the first embodiment.Particularly, FIG. 5 illustrates a portion with two string units SU inone block BLK. Specifically, FIG. 5 illustrates two NAND strings NS, onefor each of two string units SU, and surrounding portions thereof.Plural configurations illustrated in FIG. 5 are arranged in the Xdirection, and for example, a set of plural NAND strings NS arranged inthe X direction corresponds to one string unit SU.

The memory cell array 21_1 is provided on a semiconductor substrate 30.In the following description, a plane parallel to the surface of thesemiconductor substrate 30 is defined as an XY plane, and a directionperpendicular to the XY plane is defined as a Z direction. The Xdirection and the Y direction are assumed to be perpendicular to eachother.

A p-type well region 30 p is provided on an upper region of thesemiconductor substrate 30. Plural NAND strings NS are provided on thep-type well region 30 p. That is, for example, a wiring layer 31functioning as a select gate line SGS, eight-layer wiring layers 32functioning as word lines WL0 to WL7 (WL0 to WL7), and a wiring layer 33functioning as a select gate line SGD are sequentially stacked on thep-type well region 30 p. Plural wiring layers 31 and plural wiringlayers 33 may be stacked. An insulating film (not illustrated) isprovided between the stacked wiring layers 31 to 33.

The wiring layer 31 is commonly connected, for example, to the gate ofthe select transistor ST2 of each of the plural NAND strings NS in oneblock BLK. The wiring layer 32 is commonly connected to the control gateof the memory cell transistor MT of each of the plural NAND strings NSin one block BLK for each layer. The wiring layer 33 is commonlyconnected to the gate of the select transistor ST1 of each of the pluralNAND strings NS in one string unit SU.

A memory hole MH passes through the wiring layers 33, 32, 31 and reachthe p-type well region 30 p. On the side surface of the memory hole MH,a block insulating film 34, a charge storage layer (e.g., an insulatingfilm) 35, and a tunnel oxide film 36 are provided in this order. Asemiconductor filler (e.g., conductive film) 37 is embedded in thememory hole MH. The semiconductor filler 37 is, for example, undopedpolysilicon and functions as a current path for the NAND string NS. Awiring layer 38 functioning as a bit line BL is provided above thesemiconductor filler 37. The semiconductor filler 37 and the wiringlayer 38 are connected through a contact plug 45.

As described above, the select transistor ST2, the plural memory celltransistors MT, and the select transistor ST1 are sequentially stackedabove the p-type well region 30 p, and one memory hole MH corresponds toone NAND string NS.

An n+-type impurity diffusion region 39 and a p+-type impurity diffusionregion 40 are provided in the upper portion of the p-type well region 30p. A contact plug 41 is provided on the upper surface of the n+-typeimpurity diffusion region 39. A wiring layer 42 functioning as a sourceline CELSRC is provided on the upper surface of the contact plug 41. Acontact plug 43 is provided on the upper surface of the p+-type impuritydiffusion region 40. A wiring layer 44 functioning as a well line CPWELLis provided on the upper surface of the contact plug 43.

Further, the memory cell array 21_1 may have other configurations, suchas, for example, the configurations described in U.S. patent applicationSer. No. 12/407,403, filed on Mar. 19, 2009 and entitled“Three-Dimensional Stacked Nonvolatile Semiconductor Memory,” U.S.patent application Ser. No. 12/406,524, filed on Mar. 18, 2009 andentitled “Three-Dimensional Stacked Nonvolatile Semiconductor Memory,”U.S. patent application Ser. No. 12/679,991, filed on Mar. 23, 2009 andentitled “Nonvolatile Semiconductor Storage Device and ManufacturingMethod Thereof,” and U.S. patent application Ser. No. 12/532,030, filedon Mar. 25, 2010 and entitled “Semiconductor Memory and ManufacturingMethod Thereof.” These patent applications are incorporated herein byreference in their entirety.

1.1.6 Configuration of Sense Amplifier Module

Next, descriptions will be made on the configuration of the senseamplifier module of the semiconductor storage device according to thefirst embodiment. FIG. 6 is a block diagram illustrating an example ofthe configuration of the sense amplifier module of the semiconductorstorage device according to the first embodiment. As illustrated in FIG.6, the sense amplifier module 21_3 includes sense amplifier units SAU(SAU0, SAU1, . . . , SAU(m−1)) provided for each bit line BL.

Each of the sense amplifier units SAU includes a sense amplifier SA, alatch circuit SDL, and a latch circuit XDL.

The sense amplifier SA is a circuit that reads data by sensing thethreshold voltage of the memory cell transistor MT by the voltage orcurrent of a corresponding bit line BL and applies a voltage to the bitline BL again according to the write data. That is, the sense amplifierSA directly controls the bit line BL. In the sense amplifier SA, at thetime of reading data, a strobe signal is given via a node STB, forexample, by the sequencer 25. The sense amplifier SA determines the readdata at the timing at which the strobe signal is asserted and stores thedata in the latch circuit SDL.

The latch circuit SDL temporarily stores the read data read by the senseamplifier SA and the write data to be written by the sense amplifier SA.As will be described later, in the sense amplifier unit SAU, the senseamplifier SA includes a node SEN, and the latch circuits SDL and XDL areconnected by a bus DBUS. Since the node SEN and the bus DBUS have alarge parasitic capacitance, they may be used as a temporary latch. Forexample, it is possible to perform various logical operations such as anegative (NOT) operation, a logical sum (OR) operation, a logicalproduct (AND) operation, a negative logical product (NAND) operation, anegative logical sum (NOR) operation, and an exclusive logical sum (XOR)operation by temporarily loading the data stored in the latch circuitsSDL and XDL onto the node SEN and the bus DBUS.

The sense amplifier SA and the latch circuit SDL are connected to acommon node so that data may be exchanged with each other. Further, thelatch circuit XDL is connected to the sense amplifier SA and the latchcircuit SDL via the bus DBUS.

Input/output of data in the sense amplifier module 21_3 is performedthrough the latch circuit XDL. That is, the data received from thememory controller 10 is transferred from the input/output circuit 22 tothe latch circuit XDL via an input/output bus XBUS, and then transmittedto the latch circuit SDL or the sense amplifier SA. The data of thelatch circuit SDL or the sense amplifier SA is transferred to the latchcircuit XDL via the bus DBUS and then transmitted to the input/outputcircuit 22 or the memory controller 10 via the bus XBUS. In this way,the latch circuit XDL functions as a cache memory of the semiconductorstorage device 20, which is connected in series between the input/outputcircuit 22 and the sense amplifier SA. Therefore, even when the latchcircuit SDL is in use, when the latch circuit XDL is unused (in anavailable state), the semiconductor storage device 20 may be in a readystate. In the meantime, when the latch circuit XDL is in use, thesemiconductor storage device 20 may not be in a ready state except for apredetermined case such as a pseudo cache program operation (to bedescribed later).

FIG. 7 is a circuit diagram illustrating an example of the configurationof a sense amplifier unit of the semiconductor storage device accordingto the first embodiment. In FIG. 7, the configurations of the senseamplifier SA, the latch circuit SDL, and the latch circuit XDL areillustrated as an example of the sense amplifier units SAU in the senseamplifier module 21_3.

First, descriptions will be made on the configuration of the senseamplifier SA.

As illustrated in FIG. 7, the sense amplifier SA includes transistorsTr1, Tr2, Tr3, Tr4, Tr5, Tr6, Tr7, Tr8, Tr9, Tr10, and Tr11, andcapacitors C1 and C2. The transistors Tr1 to Tr5 and Tr7 to Tr11 have,for example, an n-type polarity, and the transistor Tr6 has, forexample, a p-type polarity.

The transistor Tr1 is, for example, a transistor of high breakdownvoltage, and includes a first end connected to the bit line BL, a secondend connected to a first end of the transistor Tr2, and a gate connectedto a node BLS. The transistor Tr2 includes a second end connected to anode SCOM and a gate connected to a node BLC.

The transistor Tr3 includes a first end connected to the node SCOM, asecond end connected to a node SSRC, and a gate connected to a node BLX.The transistor Tr4 includes a first end connected to the node SCOM, asecond end connected to a node VLSA, and a gate connected to a node NLO.

The transistor Tr5 includes a first end connected to the node SSRC, asecond end connected to a node SRCGND, and a gate connected to a nodeLAT_S. The transistor Tr6 includes a first end connected to the nodeSSRC, a second end connected to a node VHSA, and a gate connected to thenode LAT_S.

The transistor Tr7 includes a first end connected to the node SCOM, asecond end connected to the node SEN, and a gate connected to a nodeXXL. The capacitor C1 includes a first end connected to the node SEN anda second end connected to a node CLKSA. The capacitor C2 includes afirst end connected to the node SEN and a second end connected to thebus DBUS.

The transistor Tr8 includes a first end connected to the node SEN, asecond end connected to a node VHLB, and a gate connected to a node BLQ.The transistor Tr9 includes a first end connected to the node SEN, asecond end connected to the bus DBUS, and a gate connected to a nodeDSW.

The transistor Tr10 includes a first end connected to the node CLKSA, asecond end connected to a first end of the transistor Tr11, and a gateconnected to the node SEN. The transistor Tr11 includes a second endconnected to a node INV_S and a gate connected to the node STB.

Next, the configuration of the latch circuit SDL will be described withreference to FIG. 7.

The latch circuit SDL includes transistors Tr12, Tr13, Tr14, Tr15, Tr16,Tr17, Tr18, and Tr19. The transistors Tr14 and Tr17 to Tr19 have, forexample, an n-type polarity, and the transistors Tr12, Tr13, Tr15 andTr16 have, for example, a p-type polarity.

The transistor Tr12 includes a first end connected to the node INV_S, asecond end connected to a first end of the transistor Tr13, and a gateconnected to a node SLI. The transistor Tr13 includes a second endconnected to a node VDDSA and a gate connected to the node LAT_S. Thetransistor Tr14 includes a first end connected to the node INV_S, asecond end connected to a node VSS_SDL, and a gate connected to the nodeLAT_S.

The transistor Tr15 includes a first end connected to the node LAT_S, asecond end connected to a first end of the transistor Tr16, and a gateconnected to a node SLL. The transistor Tr16 includes a second endconnected to the node VDDSA and a gate connected to the node INV_S. Thetransistor Tr17 includes a first end connected to the node LAT_S, asecond end connected to the node VSS_SDL, and a gate connected to thenode INV_S.

The transistor Tr18 includes a first end connected to the node INV_S, asecond end connected to the bus DBUS, and a gate connected to a nodeSTI. The transistor Tr19 includes a first end connected to the nodeLAT_S, a second end connected to the bus DBUS, and a gate connected tothe node STL.

Next, the configuration of the latch circuit XDL will be described withreference to FIG. 7.

The latch circuit XDL includes transistors Tr20, Tr21, Tr22, Tr23, Tr24,Tr25, Tr26, Tr27, Tr28, and Tr29. The transistors Tr20, Tr22, Tr25,Tr27, and Tr29 have, for example, an n-type polarity. The transistorsTr21, Tr23, Tr24, Tr26, and Tr28 have, for example, a p-type polarity.

The transistor Tr20 includes a first end connected to the bus DBUS, asecond end connected to a node INV_X, and a gate connected to a nodeXTI.

The transistor Tr21 includes a first end connected to the node INV_X, asecond end connected to a first end of the transistor Tr23, and a gateconnected to a node LAT_X. The transistor Tr22 includes a first endconnected to the node INV_X, a grounded second end, and a gate connectedto the node LAT_X. The transistor Tr23 includes a second end connectedto the node VDDSA and a gate connected to a node XLI.

The transistor Tr24 includes a first end connected to the node LAT_X, asecond end connected to a first end of the transistor Tr26, and a gateconnected to the node INV_X. The transistor Tr25 includes a first endconnected to the node LAT_X, a second end connected to a first end ofthe transistor Tr27, and a gate connected to the node INV_X. Thetransistor Tr26 includes a second end connected to the node VDDSA and agate connected to a node XLL. The transistor Tr27 includes a groundedsecond end and a gate connected to a node XNL.

The transistor Tr28 includes a first end connected to the node LAT_X, asecond end connected to the bus XBUS, and a gate connected to the nodeXNL. The transistor Tr29 includes a first end connected to the nodeLAT_X, a second end connected to the bus XBUS, and a gate connected to anode XTL. The bus XBUS is used as a path that transfers the signal I/O.

With the above-described configuration, the sense amplifier unit SAU mayfunction as a data transmission/reception path while providing a latchcircuit capable of storing data between the bit line BL and the busXBUS.

1.2 Pseudo Cache Program Operation

Next, descriptions will be made on the operation of the pseudo cacheprogram in the semiconductor storage device according to the firstembodiment. During the cache program operation, in the sense amplifierunit SAU of the sense amplifier module 21_3, the sense amplifier SA,during a period in which a write operation for a certain page (e.g., afirst page) is executed based on the write data stored in the latchcircuit SDL, executes an operation of inputting write data for anotherpage different from the certain page (e.g., a second page) into thelatch circuit XDL. The pseudo cache program operation may be applied toa case where the first page and the second page are to be written todifferent planes PB.

FIG. 8 is a command sequence for a pseudo cache program operation in thesemiconductor storage device according to the first embodiment. FIG. 8illustrates, as an example, the case where the write operation on theplane PB0 and the write operation on the plane PB1 are alternatelyexecuted in accordance with the sequence of the pseudo cache programoperation.

As illustrated in FIG. 8, the memory controller 10 issues and transmitsa command “80h” to the semiconductor storage device 20 when the writecommand has not been transmitted immediately before and thesemiconductor storage device 20 is in a ready state. The command “80h”instructs the write operation of data to the semiconductor storagedevice 20.

The controller 10 issues and transmits an address ADD to thesemiconductor storage device 20. For example, the address ADD may beover five cycles. This address ADD designates, for example, the plane PBto be written, the block BLK, and a certain area within the block BLK.In the example of FIG. 8, the sequencer 25 specifies the address of thearea in which data is written in the plane PB0 by the address ADD. Whenthe address ADD is stored in the register 24, the sequencer 25 releasesthe latch circuits XDL in all the planes PB (i.e., resets the datastored in all the latch circuits XDL to “1” to place them in an unusedstate and make them available for use). As a result, it is possible toprevent an unexpected write operation from being executed in thesubsequent write operation. The number of cycles of the address ADD isnot limited to five (5) cycles, and any number of cycles is applicable.

Subsequently, the controller 10 transmits write data Din to thesemiconductor storage device 20. The controller 10 then issues andtransmits, for example, a command “15h” to the semiconductor storagedevice 20. The command “15h” causes the semiconductor storage device 20to execute a data write operation based on the address ADD and the writedata Din transmitted immediately before. In addition, the command “15h”notifies the semiconductor storage device 20 that the write operation isa cache program operation. A command set including the command “80h,”the address ADD, the write data Din, and the command “15h” may bereferred to as a “set of first type write commands” herein. In addition,a command set including the command “80h,” the address ADD, the writedata Din, and a command “11h” (to be described later) may be referred toas a “set of second type write commands” herein. In addition, a commandset including the command “80h,” the address ADD, the write data Din,and a command “10h” may be referred to as a “set of third type writecommands” herein.

When the command “15h” is stored in the register 24, the logic controlcircuit 23 sets the signal /RB to “L” and notifies the memory controller10 that the semiconductor storage device 20 is in a busy state. Thesequencer 25 inputs the write data Din transmitted from the memorycontroller 10 into the corresponding latch circuit XDL in the plane PB0.Then, the sequencer 25 moves the write data Din to another latch circuit(e.g., the latch circuit SDL) in the plane PB0. Thereafter, thesequencer 25 controls the voltage generating circuit 26, the row decoder21_2 of the plane PB0 in the core unit 21, the sense amplifier module21_3, and the like so as to start the write operation.

Here, the write operation includes a program operation and a verifyoperation. The program operation is an operation that increases thethreshold voltage of the memory cell transistor MT based on the writedata Din. The verify operation is an operation that senses the thresholdvoltage of the memory cell transistor MT after the program operation anddetermines whether the threshold voltage of the memory cell transistorMT has increased to a desired value. The sequencer 25 continues toalternately execute the program operation and the verify operation untilthe verify operation is successful.

For this purpose, during the write operation, it is necessary to storethe write data Din in at least one latch circuit (e.g., the latchcircuit SDL), and to store the read data which is read during the verifyoperation in the other one latch circuit (e.g., the latch circuit XDL).Therefore, in the semiconductor storage device 20 according to thepresent embodiment, even when the write data Din is moved from the latchcircuit XDL to the latch circuit SDL, the latch circuit XDL is in anin-use state during the write operation.

As described above, when the latch circuit XDL is in use, thesemiconductor storage device 20 generally does not go into a readystate. Thus, in the pseudo cache program operation, the sequencer 25makes the latch circuit XDL in the plane PB0 appear as being available(hereinafter referred to as pseudo-available, and the act of making thelatch circuit XDL pseudo-available referred to as pseudo-release) beforethe write operation on the plane PB0 is completed (e.g., at the sametime as the start of the write operation on the plane PB0 after theinput of the write data Din into the corresponding latch circuit XDL iscompleted). Specifically, the sequencer 25 does not reset the datastored in the latch circuit XDL in the plane PB0, and regards the latchcircuits XDL in all the planes PB as an unused state (i.e.,pseudo-available). In other words, the semiconductor storage device 20according to the first embodiment not only goes into a ready state whenthe latch circuits XDL in all the planes PB are in an unused state, butalso, after the input of the write data Din into the latch circuits XDLin portions of all the planes PB (e.g., the planes PB), goes into aready state even when a write operation is being executed in theportions of the planes PB.

As a result, the logic control circuit 23 may set the signal /RB to “H”and notify the memory controller 10 that the semiconductor storagedevice 20 is in a ready state. Therefore, the memory controller 10 mayrecognize that the semiconductor storage device 20 is capable ofaccepting a new command.

Subsequently, the memory controller 10 issues and transmits the command“80h” and the address ADD (over five cycles) to the semiconductorstorage device 20. In the example of FIG. 8, the sequencer 25 specifiesthe address of the area in which data is written in the plane PB1 by thecorresponding address ADD.

Subsequently, the controller 10 transmits the write data Din to thesemiconductor storage device 20. The controller 10 issues and transmits,for example, a command “15h” to the semiconductor storage device 20.When the command “15h” is stored in the register 24, the logic controlcircuit 23 sets the signal /RB to “L” and notifies the memory controller10 that the semiconductor storage device 20 is in a busy state.

The sequencer 25 inputs the write data Din transmitted from the memorycontroller 10 into the corresponding latch circuit XDL in the plane PB1while executing the write operation for the plane PB0. Then, thesequencer 25 moves the write data Din to another latch circuit SDL inthe plane PB1. The sequencer 25 waits to execute a write operation onthe plane PB1 until the write operation on the plane PB0 has completed.

When the write operation on the plane PB0 has completed, the sequencer25 releases the latch circuit XDL in the plane PB0. As a result, thelatch circuit XDL in the plane PB0 may be changed from the in-use stateto the unused state. Further, the sequencer 25 starts the writeoperation on the plane PB1 because the write operation on the plane PB0has completed. At this time, the sequencer 25 makes pseudo-available thelatch circuit XDL in the plane PB1. Specifically, the sequencer 25 doesnot reset the data stored in the latch circuit XDL in the plane PB1, andregards the latch circuits XDL in all the planes PB as an unused state.As a result, the logic control circuit 23 may set the signal /RB to “H”and notify the memory controller 10 that the semiconductor storagedevice 20 is in a ready state. Therefore, the memory controller 10 mayrecognize that the semiconductor storage device 20 is capable ofaccepting a new command.

When the write command to the plane PB0 is received when the writecommand has not been transmitted immediately before and thesemiconductor storage device 20 is in a ready state, after the input ofthe write data into the latch circuit XDL in the plane PB0 is completed,the sequencer 25 sets the signal /RB to level “H” to the logic controlcircuit 23 and notifies the memory controller 10 that the semiconductorstorage device 20 is in a ready state. Meanwhile, when the write commandto the plane PB1 is received while the write operation is being executedin response to reception of the write command to the plane PB0, afterthe input of the write data into the latch circuit XDL in the plane PB1is completed and the write operation on the plane PB0 is completed, thesequencer 25 sets the signal /RB to the level “H” to the logic controlcircuit 23 and notifies the memory controller 10 that the semiconductorstorage device 20 is in a ready state.

In other words, in the semiconductor storage device 20 according to thefirst embodiment, a first period D1 required from receiving the set offirst type write commands for a certain plane (plane PB0) (including“15h”) to returning to the ready state is shorter than a second periodD2 required from thereafter receiving the set of first type writecommands for the other plane (plane PB1) to again returning to the readystate.

Subsequently, the memory controller 10 issues and transmits the command“80h” and the address ADD (over five cycles) to the semiconductorstorage device 20. In the example of FIG. 8, the sequencer 25 specifiesthe address of the area in which data is written in the plane PB0 by thecorresponding address ADD.

Subsequently, the controller 10 transmits the write data Din to thesemiconductor storage device 20. The controller then issues andtransmits the command “10h” to the semiconductor storage device 20. Thecommand“10h” causes the semiconductor storage device 20 to execute adata write operation based on the address ADD and the write data Dintransmitted immediately before. Further, the command “10h” notifies thesemiconductor storage device 20 that further write operation will not beinstructed until this cache program operation has ended.

When the command “10h” is stored in the register 24, the logic controlcircuit 23 sets the signal /RB to “L” and notifies the memory controller10 that the semiconductor storage device 20 is in a busy state.

The sequencer 25 inputs the write data Din transmitted from the memorycontroller 10 into the corresponding latch circuit XDL in the plane PB0while executing the write operation on the plane PB1. Then, thesequencer 25 moves the corresponding write data Din to another latchcircuit SDL in the plane PB0. Thereafter, the sequencer 25 waits toexecute a write operation on the plane PB0 until the write operation onthe plane PB1 is completed.

When the write operation on the plane PB1 has completed, the sequencer25 makes available the latch circuit XDL in the plane PB1. As a result,the latch circuit XDL in the plane PB1 may be changed from the in-usestate to the unused state. Further, the sequencer 25 starts the writeoperation on the plane PB0 as the write operation on the plane PB1 hascompleted.

When the write operation on the plane PB0 has completed, the sequencer25 releases the latch circuit XDL in the plane PB0. As a result, thelatch circuit XDL in all the planes PB including the plane PB0 may bechanged from the in-use state to the unused state. The logic controlcircuit 23 sets the signal /RB to “H” and notifies the memory controller10 that the semiconductor storage device 20 is in a ready state.

This completes the operation of the pseudo cache program.

Further, the memory controller 10 may output the data stored in thelatch circuit XDL at any time during the above-described pseudo cacheprogram operation. To do this, the memory controller 10 issues andtransmits a command “05h,” a column address, and a command “E0h” to thesemiconductor storage device 20. The semiconductor storage device 20outputs the data stored in the latch circuit XDL to the memorycontroller 10 in response to a corresponding command sequence.

1.3 Effect of the Present Embodiment

According to the first embodiment, an increase in the latency of thewrite operation may be prevented. This effect will be described below.

The semiconductor storage device 20 substantially supports the cacheprogram operation although all (e.g., two) latch circuits XDL and SDLprovided in the respective sense amplifier units SAU are used in thewrite operation. That is, upon receiving the commands which instruct thecache program operation to be carried out on the plane PB0 (“80h” to“15h”), the sequencer 25 is configured to receive the commands whichinstruct the subsequent cache program operation (“80h” to “15h” or “80h”to “10h”) before the use of the latch circuit XDL in the plane PB0 iscompleted. As a result, the logic control circuit 23 may notify thememory controller 10 that the semiconductor storage device 20 is in theready state although the plane PB0 is executing the write operationwhile using the latch circuit XDL. Similarly, an operation of inputtingthe write data Din to the other plane PB1 into the latch circuit XDL maybe executed in parallel with the write operation on the plane PB0.Therefore, an increase in the latency of the write operation may beprevented.

In the (regular) cache program operation, the logic control circuit 23may set the signal /RB to the level “H” as long as the latch circuit XDL(through which input/output of data in the sense amplifier unit SAU isperformed) is not in use, even if the sense amplifier SA and the latchcircuit SDL are in use. This is because, for example, the data for nextwrite operation can be input into the latch circuit XDL as a preparationfor the next write operation regardless of whether the sense amplifierSA and the latch circuit SDL are in use or not. In the other words, inthe (regular) cache program operation, the logic control circuit 23 maynot set the signal /RB to the level “H” as long as the latch circuit XDLis in use. When the semiconductor storage device 20 has a small numberof latch circuits (especially when there are only two latch circuits SDLand XDL as in the first embodiment), the latch circuit XDL tends to bein use until the later stage (sometimes, until the end stage) of thewrite operation, and therefore, the signal /RB may not be set into thelevel “H” until the later stage of the write operation. Therefore, the(regular) cache program operation may not be supported in theconfiguration like the semiconductor storage device 20 according to thefirst embodiment.

In the first embodiment, the semiconductor storage device 20 has pluralplanes PB. Each plane PB includes the memory cell array 21_1, the rowdecoder 21_2, and the sense amplifier module 21_3, and may perform awrite operation, a read operation, and an erase operation for each planePB. In addition, the memory system 1 provides a constraint to make theplane PB to be written in a subsequent cache program operation, bedifferent from the plane PB to be written in the immediately precedingcache program operation. As a result, after the write data Din is inputinto the latch circuit XDL in a certain plane PB (e.g., the plane PB0),the sequencer 25 may regard that no new write data Din is transferred tothe latch circuit XDL in that plane PB (e.g., the plane PB0) while thewrite operation is being executed. As a result, the sequencer 25 maypseudo-release the latch circuit XDL in the plane PB0. Therefore, theperiod required for inputting the write data into the other plane PB1having the unused latch circuit XDL may be overlapped with the periodrequired for the write operation on the plane PB0, and further, theincrease in the latency of the write operation may be prevented.

In the first embodiment, descriptions have been made for the case wherethe latch circuit XDL is in use in the verify operation during the writeoperation, but the present disclosure is not limited to this. Forexample, even when the latch circuit XDL is in use during the programoperation of the write operation, the pseudo cache program operationequivalent to that of the first embodiment may be applied and anequivalent effect may be attained.

1.4 Modifications, etc.

In the first embodiment, descriptions have been made on the case wherethe latch circuit XDL is pseudo-released in the sequence of the cacheprogram operation. However, the present disclosure is not limited tothis, and various modifications may be made. For example, when anotheroperation such as a read operation interrupts the cache programoperation, the latch circuit XDL may be pseudo-released in a similarmanner. In the following description, the configuration and operationsimilar to those of the first embodiment will be appropriatelydescribed, and the configuration and operation different from those ofthe first embodiment will mainly be described.

1.4.1 First Modification

Descriptions will be made on a case where a read operation causes aninterrupt by issuing a command of stopping the write operation duringthe pseudo cache program operation.

FIG. 9 is a command sequence for a pseudo cache program operationinterrupted by a read operation in the semiconductor storage deviceaccording to a first modification of the first embodiment. FIG. 9illustrates an example of a case where the read operation interrupts andis executed during the pseudo cache program operation described in FIG.8 of the first embodiment.

As illustrated in FIG. 9, the memory controller 10 first issues andtransmits the command “80h,” the address ADD, the write data Din, andthe command “15h” to the semiconductor storage device 20 in order toinstruct the pseudo cache program operation on the plane PB0. When theaddress ADD is stored in the register 24, the sequencer 25 releases thelatch circuits XDL in all the planes PB. When the command “15h” isstored in the register 24, the logic control circuit 23 sets the signal/RB to “L” and notifies the memory controller 10 that the semiconductorstorage device 20 is in a busy state. The sequencer 25 inputs the writedata Din into the corresponding latch circuit XDL in the plane PB0 andthen moves the write data Din to the other latch circuit SDL in theplane PB0. Then, the sequencer 25 starts the write operation on theplane PB0.

The sequencer 25 pseudo-releases the latch circuit XDL in the plane PB0before the write operation on the plane PB0 is completed. The logiccontrol circuit 23 sets the signal /RB to “H” and notifies the memorycontroller 10 that the semiconductor storage device 20 is in a readystate.

The memory controller 10 receives an execution command of a readoperation having a high priority, for example, from an external hostdevice. Along with this, the memory controller 10 issues and transmits acommand “A7h” to the semiconductor storage device 20. The command “A7h”notifies the semiconductor storage device 20 that a write operationunder execution is stopped and interrupted by a new operation.

Subsequently, the memory controller 10 issues and transmits a command“00h” to the semiconductor storage device 20. The command “00h”instructs a read operation of data from the semiconductor storage device20.

The memory controller 10 issues and transmits the address ADD (forexample, over five cycles) to the semiconductor storage device 20. Thisaddress ADD specifies, for example, the address of the plane PB to beread, the block BLK, and a certain area in the block BLK. Here, theaddress ADD may designate any block BLK in any plane PB irrespective ofthe plane PB0 which is executing the write operation.

The memory controller 10 issues and transmits a command “30h” to thesemiconductor storage device 20. The command “30h” causes thesemiconductor storage device 20 to read data based on the address ADDtransmitted immediately before. As a result, the semiconductor storagedevice 20 stops the write operation and starts the interrupting readoperation.

Specifically, the logic control circuit 23 sets the signal /RB to level“L” and notifies the memory controller 10 that the semiconductor storagedevice 20 is in a busy state. The sequencer 25 stops the write operationon the plane PB0 and prepares to start the read operation. Specifically,the sequencer 25 moves the write data Din stored in the latch circuitSDL to the latch circuit XDL. Thereafter, the sequencer 25 starts theoperation of reading data from the memory cell transistor MT.

After completion of the data read operation, the logic control circuit23 sets the signal /RB to the level “H” and notifies the memorycontroller 10 that the semiconductor storage device 20 is in a readystate. When the semiconductor storage device 20 is in the ready state,the memory controller 10 repeatedly asserts the signal /RE. Each timethe signal /RE is toggled, the read data is output to the memorycontroller 10.

After the output of the read data to the memory controller 10 iscompleted, the memory controller 10 issues and transmits a command “48h”to the semiconductor storage device 20. The command “48h” notifies thesemiconductor storage device 20 to resume the stopped write operation.Upon receiving the command “48h,” the sequencer 25 resumes the writeoperation on the plane PB0 and pseudo-releases the latch circuit XDL inthe plane PB0 again. The latch circuit XDL in the plane PB0 is in use asthe write operation on the plane PB0 is resumed, but the sequencer 25does not reset the latch circuit XDL in the plane PB0, and regards thelatch circuits in all the planes PB as an unused state. Therefore, thesemiconductor storage device 20 remains in the ready state, and thememory controller 10 may recognize that the semiconductor storage device20 is in a state capable of accepting a new command.

Next, the memory controller 10 issues and transmits the command “80h,”the address ADD, the write data Din, and the command “10h” to thesemiconductor storage device 20 in order to instruct the pseudo cacheprogram operation on the plane PB1. When the command “10h” is stored inthe register 24, the logic control circuit 23 sets the signal /RB to “L”and notifies the memory controller 10 that the semiconductor storagedevice 20 is in a busy state. The sequencer 25 inputs the write data Dininto the corresponding latch circuit XDL in the plane PB1 and then,moves the write data Din to the other latch circuit SDL in the planePB1. The sequencer 25 waits to execute a write operation on the planePB1 until the write operation on the plane PB0 is completed.

When the write operation on the plane PB0 is completed, the sequencer 25releases the latch circuit XDL in the plane PB0. As a result, the latchcircuit XDL in the plane PB0 may be changed from the in-use state to theunused state. Further, the sequencer 25 starts the write operation onthe plane PB1 as the write operation on the plane PB0 is completed. Whenthe write operation on the plane PB1 is completed, the sequencer 25releases the latch circuit XDL in the plane PB1. As a result, the latchcircuit XDL in all the planes PB including the plane PB1 may be changedfrom the in-use state to the unused state. The logic control circuit 23sets the signal /RB to “H” and notifies the memory controller 10 thatthe semiconductor storage device 20 is in a ready state.

With the above operation, the pseudo cache program operation that wasinterrupted by the read operation ends.

Further, as described above, the latch circuit XDL is connected inseries between the sense amplifier SA and the input/output circuit 22.Thus, it is necessary to pass through the latch circuit XDL in order tooutput the data read from the memory cell transistor MT to the memorycontroller 10. Therefore, when the plane PB to be read is the same asthe plane PB in which the write operation is stopped (i.e., the planePB0 in the case of FIG. 9), there is a possibility that the write dataDin may be stored in the latch circuit XDL. Therefore, there is apossibility that the write data Din and read data may collide with eachother in the latch circuit XDL.

FIG. 10 is a schematic diagram illustrating data movement performed toavoid data collision in the sense amplifier unit in the semiconductorstorage device according to the first modification of the firstembodiment. FIG. 10 illustrates a case where the write operation on theplane PB0 is executed and interrupted by the data read operation on theplane PB0.

As illustrated in FIG. 10, in step S1, the sequencer 25 first stores thewrite data Din in the latch circuit XDL.

Subsequently, in step S2, the sequencer 25 reads the data by sensing thethreshold voltage of the memory cell transistor MT to be read at a nodeSEN, and stores the read data in the latch circuit SDL.

In step S3, the sequencer 25 stores the write data Din stored in thelatch circuit XDL at the node SEN in the sense amplifier SA.

In step S4, the sequencer 25 stores the read data stored in the latchcircuit SDL in the latch circuit XDL.

In step S5, the sequencer 25 stores the write data Din which is storedat the node SEN in the latch circuit SDL.

In step S6, the sequencer 25 outputs the read data transferred to thelatch circuit XDL to the memory controller 10.

In step S7, the sequencer 25 stores the write data Din which is storedin the latch circuit SDL in the latch circuit XDL.

With the above-described operations, data may be read without losing thewrite data Din even when the plane PB in which the write operation isstopped and the plane PB to be read are the same.

In FIG. 10, descriptions have been made on the case where the plane PBin which the write operation is stopped and the plane PB to be read arethe same, but the present disclosure is not limited to this. That is,the plane PB in which the write operation is stopped may be differentfrom the plane PB to be read. In this case, it is not necessary toconsider the possibility that the write data Din and the read data maycollide with each other in the latch circuit XDL. Therefore, thesequencer 25 may output the read data to the memory controller 10according to the sequence in which the steps S1, S3, S5, and S7 in theexample of FIG. 10 are omitted (i.e., according to the sequence of stepsS2, S4, and S6).

According to the first modification of the first embodiment, as in thefirst embodiment, the sequencer 25 pseudo-releases the latch circuit XDLin the plane PB0 during the execution of the write operation on theplane PB0. As a result, the logic control circuit 23 may set the signal/RB to the level “H.” For this reason, the memory controller 10 maytransmit the command “A7h” to the semiconductor storage device 20 whenthe semiconductor storage device 20 is in a ready state. Therefore, thetime required until the read operation is started may be reduced.

When the write operation is not a write operation using the pseudo cacheprogram operation, the semiconductor storage device 20 is in a busystate during the write operation on the plane PB0. When interrupted bythe read operation in this state, the sequencer 25 needs to receive thecommand “A7h” in a busy state. Since the sequencer 25 needs to execute aprocessing to change the setting in the semiconductor storage device 20to the ready state in order to receive a new read command “00h,” thereis a possibility that the latency of the read operation may increase.

According to the first modification of the first embodiment, since thesequencer 25 may receive the command “A7h” because it is in the readystate, the processing of changing the setting from the busy state to theready state described above becomes unnecessary. Therefore, an increasein the latency of the read operation may be prevented.

1.4.2 Second Modification

Next, descriptions will be made on an operation when the read operationis executed to interrupt the pseudo cache program operation in which thewrite data Din is input into the latch circuit XDL.

FIG. 11 is a command sequence for a pseudo cache program operationinterrupted by a read operation in the semiconductor storage deviceaccording to a second modification of the first embodiment. FIG. 11illustrates a case where a pseudo cache program operation is executedfor a write operation in which plural planes PB are synchronized. Morespecifically, FIG. 11 illustrates, as an example, a case where the writeoperation in which the write operations to the planes PB0 and PB1 areexecuted synchronously and the write operation in which the writeoperations to the planes PB2 and PB3 are executed synchronously areexecuted alternately in accordance with the sequence of the pseudo cacheprogram operation. FIG. 11 also illustrates an example of the operationwhen the read operation interrupts the write operation during which thewrite data Din is input into the latch circuit XDL.

As illustrated in FIG. 11, the memory controller 10 first issues andtransmits the command “80h,” the address ADD, the write data Din, andthe command “11h to the semiconductor storage device 20 in order toinstruct a write operation on the plane PB0. The command “11h” causesthe semiconductor storage device 20 to execute the write operations toplural plane PBs synchronously. When the address ADD is stored in theregister 24, the sequencer 25 releases the latch circuits XDL in all theplanes PB. When the command “11h” is stored in the register 24, thelogic control circuit 23 sets the signal /RB to “L” and notifies thememory controller 10 that the semiconductor storage device 20 is in abusy state. The sequencer 25 inputs the write data Din into thecorresponding latch circuit XDL in the plane PB0 and then, moves thewrite data Din to the other latch circuit SDL in the plane PB0. Thelogic control circuit 23 sets the signal /RB to the level “H,” notifiesthe memory controller 10 that the semiconductor storage device 20 is ina ready state, and waits for a command that instructs the writeoperation to be synchronized with the plane PB0.

The memory controller 10 issues and transmits the command “80h,” theaddress ADD, the write data Din, and the command “15h to thesemiconductor storage device 20 in order to instruct a write operationon the plane PB1. When the command “15h” is stored in the register 24,the logic control circuit 23 sets the signal /RB to “L” and notifies thememory controller 10 that the semiconductor storage device 20 is in abusy state. The sequencer 25 inputs the write data Din into thecorresponding latch circuit XDL in the plane PB1 and then, moves thewrite data Din to the other latch circuit SDL in the plane PB1. Then,the sequencer 25 starts the synchronous write operation on the planesPB0 and PB1 when the input of the write data Din is completed.

The sequencer 25 pseudo-releases the latch circuit XDL in the planes PB0and PB1 before the synchronous write operation on the planes PB0 and PB1is completed. The logic control circuit 23 sets the signal /RB to “H”and notifies the memory controller 10 that the semiconductor storagedevice 20 is in a ready state.

Subsequently, the memory controller 10 issues and transmits the command“80h,” the address ADD, the write data Din, and the command “11h” to thesemiconductor storage device 20 in order to instruct a write operationon the plane PB2. When the command “11h” is stored in the register 24,the logic control circuit 23 sets the signal /RB to “L” and notifies thememory controller 10 that the semiconductor storage device 20 is in abusy state. The sequencer 25 inputs the write data Din into thecorresponding latch circuit XDL in the plane PB2 and then, moves thewrite data Din to the other latch circuit SDL in the plane PB2. Thelogic control circuit 23 sets the signal /RB to the level “H,” notifiesthe memory controller 10 that the semiconductor storage device 20 is ina ready state, and waits for a command that instructs the writeoperation to be synchronized with the plane PB2.

The memory controller 10 receives an execution command of a readoperation having a high priority from an external host device, forexample, before the input of the write data Din into the latch circuitXDL in the plane PB2 is completed. Along with this, the memorycontroller 10 issues and transmits the command “00h,” the address ADD,and the command “30h” to the semiconductor storage device 20. As aresult, the semiconductor storage device 20 stops the input of the writedata Din into the latch circuit XDL and starts an operation tointerrupt.

Specifically, the logic control circuit 23 sets the signal /RB to thelevel “L” and notifies the memory controller 10 that the semiconductorstorage device 20 is in a busy state. The sequencer 25 stops thesynchronous write operation on the planes PB0 and PB1 and prepares tostart the read operation. Specifically, for example, the sequencer 25may transmit the write data Din, which has already been input and storedin the latch circuit SDL, to the latch circuit XDL again. Thereafter,the sequencer 25 starts the operation of reading data from the memorycell transistor MT.

Further, when the plane PB to be read is the plane PB0 or PB1 whichneeds to stop the synchronous write operation or the plane PB2 whichneeds to stop the input of the write data Din, there is a possibilitythat the write data Din and read data may collide with each other in thelatch circuit XDL. In this case, for example, a method equivalent tothat in FIG. 10 according to the first modification of the firstembodiment may be applied as a method of moving data in the senseamplifier unit SAU, and thus, descriptions thereof are omitted.

After completion of the data read operation, the logic control circuit23 sets the signal /RB to the level “H” and notifies the memorycontroller 10 that the semiconductor storage device 20 is in a readystate. When the semiconductor storage device 20 is in a ready state, thememory controller 10 repeatedly asserts the signal /RE. Each time thesignal /RE is toggled, the read data is output to the memory controller10.

After the output of the read data to the memory controller 10 iscompleted, the memory controller 10 issues and transmits a command “3Fh”to the semiconductor storage device 20. The command “3Fh” instructstransfer of a portion of the write data Din stored in the latch circuitSDL to the latch circuit XDL. Upon receiving the command “3Fh,” thesequencer 25 transfers the input write data Din from the latch circuitSDL to the latch circuit XDL. As a result, the sense amplifier unit SAUmay be returned to the state immediately before the interruption by theread operation.

Subsequently, the memory controller 10 issues and transmits the command“48h” to the semiconductor storage device 20. Upon receiving the command“48h,” the sequencer 25 resumes the synchronous write operation on theplanes PB0 and PB1 and pseudo-releases the latch circuits XDL in theplanes PB0 and PB1 again. The latch circuits XDL in the plane PB0 andthe plane PB1 are in use as the synchronous write operation on the planePB0 and the plane PB1 is resumed, but the sequencer 25 does not resetthe latch circuits XDL in the plane PB0 and the plane PB1, and regardsthe latch circuits in all the planes PB as an unused state. Therefore,the semiconductor storage device 20 remains in the ready state, and thememory controller 10 may recognize that the semiconductor storage device20 is in a state capable of accepting a new command.

The memory controller 10 issues and transmits the command “85h,” theaddress ADD, the write data Din, and the command “11h” to thesemiconductor storage device 20. The command “85h” notifies thesemiconductor storage device 20 that the stopped input of the write dataDin is resumed. In addition, the write data Din may include data thathas not been input into the latch circuit XDL in the plane PB2 beforethe stopping due to the read operation. The sequencer 25 inputs thewrite data Din into the corresponding latch circuit XDL in the plane PB2and then, moves the write data Din to the other latch circuit SDL in theplane PB2. The logic control circuit 23 sets the signal /RB to the level“H,” notifies the memory controller 10 that the semiconductor storagedevice 20 is in a ready state, and waits for a command that instructsthe write operation to be synchronized with the plane PB2.

Next, the memory controller 10 issues and transmits the command “80h,”the address ADD, the write data Din, and the command “15h” to thesemiconductor storage device 20 in order to instruct the pseudo cacheprogram operation on the plane PB3. When the command “15h” is stored inthe register 24, the logic control circuit 23 sets the signal /RB to “L”and notifies the memory controller 10 that the semiconductor storagedevice 20 is in a busy state. The sequencer 25 inputs the write data Dininto the corresponding latch circuit XDL in the plane PB3 and then,moves the write data Din to the other latch circuit SDL in the planePB3. The sequencer 25 waits for the synchronous write operation on theplanes PB2 and PB3 until the synchronous write operation on the planesPB0 and PB1 is completed.

When the synchronous write operation on the planes PB0 and PB1 iscompleted, the sequencer 25 releases the latch circuits XDL in theplanes PB0 and PB1. As a result, the latch circuits XDL in the planesPB0 and PB1 may be changed from the in-use state to the unused state. Inaddition, as the synchronous write operation on the planes PB0 and PB1is completed, the sequencer 25 starts the synchronous write operation onthe planes PB2 and PB3. When the synchronous write operation on theplanes PB2 and PB3 is completed, the sequencer 25 releases the latchcircuits XDL in the planes PB2 and PB3. As a result, the latch circuitsXDL in all the planes PB including the planes PB2 and PB3 may be changedfrom the in-use state to the unused state. The logic control circuit 23sets the signal /RB to “H” and notifies the memory controller 10 thatthe semiconductor storage device 20 is in a ready state.

With the above operation, the pseudo cache program operation thatinterrupts the read operation ends.

According to the second modification of the first embodiment, thesequencer 25 pseudo-releases the latch circuits XDL in the planes PB0and PB1 during the execution of the synchronous write operation on theplanes PB0 and PB1. As a result, it is possible to execute thesynchronous write operation on the planes PB0 and PB1 and to input thewrite data Din into the latch circuits XDL in the planes PB2 and PB3.Therefore, it is possible to prevent an increase in the latency of thesynchronous write operation on the planes PB2 and PB3. In addition, whenan interruption of the read operation occurs in response to thesynchronous write operation on the planes PB2 and PB3, it is alsopossible to prevent an increase in the latency of the read operation.

In the second modification described above, descriptions have been madeon the case where the read command is issued during the input of thewrite data Din into the latch circuit XDL in the plane PB2, but thepresent disclosure is not limited to this. For example, the read commandmay be issued after the input of the write data Din into the latchcircuit XDL in the plane PB2 is completed and until the write command onthe plane PB3 is issued.

Further, in the above-described second modification, descriptions havebeen made on the case where the read operation interrupts when thepseudo cache program operation is executed for the synchronous writeoperation on the plural planes PB, but the present disclosure is notlimited to this. For example, the operation according to the secondmodification may be similarly applied to a case where, when the pseudocache program operation is executed for the write operation on one planePB, the read operation is interrupted as in the first embodiment and thefirst modification.

Hereinafter, still another modification to the second modification asdescribed above will be described with reference to FIG. 12.

FIG. 12 is a command sequence for a pseudo cache program operationaccompanied by a read operation executed by an interruption in thesemiconductor storage device according to still another modification ofthe second modification. FIG. 12 illustrates a case where the pseudocache program operation is executed for the write operation on oneplane, not the write operation in which the plural planes PB aresynchronized. More specifically, FIG. 12 illustrates, as an example, acase where the write operation executed to the plane PB0 and the writeoperation executed to the plane PB1 are alternately executed inaccordance with the sequence of the pseudo cache program operation. FIG.12 illustrates an example of the operation when the read operation isinterrupted after completion of the input of the write data Din into thelatch circuit XDL in the write operation.

As illustrated in FIG. 12, the memory controller 10 first issues andtransmits the command “80h,” the address ADD, the write data Din, andthe command “11h” to the semiconductor storage device 20 in order toinstruct a write operation on the plane PB0. The command “11h” notifiesthe semiconductor storage device 20 that a new write command issubsequently issued. When the address ADD is stored in the register 24,the sequencer 25 releases the latch circuits XDL in all the planes PB.When the command “11h” is stored in the register 24, the logic controlcircuit 23 sets the signal /RB to “L” and notifies the memory controller10 that the semiconductor storage device 20 is in a busy state. Thesequencer 25 inputs the write data Din into the corresponding latchcircuit XDL in the plane PB0 and then, moves the write data Din to theother latch circuit SDL in the plane PB0. The logic control circuit 23sets the signal /RB to the level “H,” notifies the memory controller 10that the semiconductor storage device 20 is in a ready state, and waitsfor a command that instructs continuous write operations to the planePB0.

The memory controller 10 issues and transmits the command “80h,” theaddress ADD, the write data Din, and the command “15h” to thesemiconductor storage device 20 in order to instruct a new writeoperation on the plane PB0. When the command “15h” is stored in theregister 24, the logic control circuit 23 sets the signal /RB to “L” andnotifies the memory controller 10 that the semiconductor storage device20 is in a busy state. The sequencer 25 inputs the write data Din intothe corresponding latch circuit XDL in the plane PB0 and then, moves thewrite data Din to the other latch circuit SDL in the plane PB0. Then,when the input of the write data Din is completed, the sequencer 25starts a write operation on the plane PB0.

The sequencer 25 pseudo-releases the latch circuit XDL in the plane PB0before the write operation on the plane PB0 is completed. The logiccontrol circuit 23 sets the signal /RB to “H” and notifies the memorycontroller 10 that the semiconductor storage device 20 is in a readystate.

Subsequently, the memory controller 10 issues the command “80h,” theaddress ADD, the write data Din, and the command “11h” to thesemiconductor storage device 20 in order to instruct a write operationon the plane PB1. When the command “11h” is stored in the register 24,the logic control circuit 23 sets the signal /RB to “L” and notifies thememory controller 10 that the semiconductor storage device 20 is in abusy state. The sequencer 25 inputs the write data Din into thecorresponding latch circuit XDL in the plane PB1 and then, moves thewrite data Din to the other latch circuit SDL in the plane PB1. Thelogic control circuit 23 sets the signal /RB to the level “H”irrespective of whether the input of the write data Din into the latchcircuit XDL is completed, and notifies to the memory controller 10 thatthe semiconductor storage device 20 is in a ready state, and waits for acommand that instructs a new write operation.

After the input of the write data Din, for example, into the latchcircuit XDL in the plane PB1 is completed, the memory controller 10receives an instruction to execute a read operation having a highpriority from an external host device before a command that instructs anew write operation is issued. Along with this, the memory controller 10issues and transmits the command “00h,” the address ADD, and the command“30h” to the semiconductor storage device 20. As a result, thesemiconductor storage device 20 stops the input of the write data Dininto the latch circuit XDL and starts an operation to interrupt.

The processing of the interrupting read operation is the same as in thecase of FIG. 11, and thus, descriptions thereof will be omitted.

After the output of the read data to the memory controller 10 iscompleted, the memory controller 10 issues and transmits the command“3Fh” to the semiconductor storage device 20. Upon receiving the command“3Fh,” the sequencer 25 transfers the input write data Din from thelatch circuit SDL to the latch circuit XDL before the read operation. Asa result, the sense amplifier unit SAU may be returned to the stateimmediately before the interruption of the read operation occurs.

Subsequently, the memory controller 10 issues and transmits the command“48h” to the semiconductor storage device 20. Upon receiving the command“48h,” the sequencer 25 resumes the write operation on the plane PB0 andpseudo-releases the latch circuit XDL in the plane PB0 again. The latchcircuit XDL in the plane PB0 is in use as the continuous write operationon the plane PB0 is resumed, but the sequencer 25 does not reset thelatch circuit XDL in the plane PB0, and regards the latch circuit in theplane PB as an unused state. Therefore, the semiconductor storage device20 remains in the ready state, and the memory controller 10 mayrecognize that the semiconductor storage device 20 is in a state capableof accepting a new command.

The memory controller 10 issues and transmits the command “85h,” theaddress ADD, and the command “11h” to the semiconductor storage device20. In the example of FIG. 12, the write data Din is not transmittedagain because all inputs into the latch circuit XDL in the plane PB1have been completed before the stopping due to the read operation. Uponreceiving the command “11h,” the logic control circuit 23 sets thesignal /RB to the level “H,” notifies the memory controller 10 that thesemiconductor storage device 20 is in a ready state, and waits for acommand that instructs a new write operation.

Next, the memory controller 10 issues and transmits the command “80h,”the address ADD, the write data Din, and the command “15h” to thesemiconductor storage device 20 in order to instruct a new writeoperation on the plane PB1. When the command “15h” is stored in theregister 24, the logic control circuit 23 sets the signal /RB to “L” andnotifies the memory controller 10 that the semiconductor storage device20 is in a busy state. The sequencer 25 inputs the write data Din intothe corresponding latch circuit XDL in the plane PB1 and then, moves thewrite data Din to the other latch circuit SDL in the plane PB1. Thesequencer 25 waits to execute a write operation on the plane PB1 untilthe write operation on the plane PB0 has completed.

When the write operation on the plane PB0 is completed, the sequencer 25releases the latch circuit XDL in the plane PB0. As a result, the latchcircuit XDL in the plane PB0 may be changed from the in-use state to theunused state. Further, the sequencer 25 starts the write operation onthe plane PB1 as the write operation on the plane PB0 is completed. Whenthe write operation on the plane PB1 is completed, the sequencer 25releases the latch circuit XDL in the plane PB1. As a result, the latchcircuits XDL in all the planes PB including the plane PB1 may be changedfrom the in-use state to the unused state. The logic control circuit 23sets the signal /RB to “H” and notifies the memory controller 10 thatthe semiconductor storage device 20 is in a ready state.

With the above-described operation, the pseudo cache program operationthat interrupts the read operation ends.

2. Others

The present disclosure is not limited to the above-described firstembodiment, the first modification and the second modification, andvarious modifications are applicable. For example, in the firstembodiment and the first modification described above, descriptions havebeen made on the pseudo cache program operation that executes the writeoperation of the plane PB0 and the write data input operation of theplane PB1 in parallel. In the second modification described above,descriptions have been made on the pseudo cache program operation thatexecutes the synchronous write operation of the planes PB0 and PB1 andthe write data input operation of the planes PB2 and PB3 in parallel.However, the present disclosure is not limited to this, and the pseudocache program operation is executable for a synchronous write operationof a set of any number of planes (e.g., three, four, eight, etc.). Morespecifically, for example, when a pseudo cache program operation isapplied to a synchronous write operation of a set of four planes, thesynchronous write operation of the planes PB0 to PB3 and the write datainput operation of the planes PB4 to PB7 may be executed in parallel.

In the first embodiment described above, descriptions have been made onan example in which the memory system 1 provides a constraint to makethe plane PB to be written in a subsequent cache program operationdifferent from the plane PB to be written in the immediately precedingcache program operation. This constraint may be given in associationwith a set of planes capable of executing a synchronous write operation.For example, in the semiconductor storage device 20 illustrated in FIG.1, when the planes PB0 to PB3, the planes PB4 to PB7, the planes PB8 toPB11, and the planes PB12 to PB15 are each a set of planes that iscapable of executing the synchronous write operation, and when a cacheprogram operation is executed on at least one of the planes PB0 to PB3,a constraint may be provided so that the target of the subsequent cacheprogram operation is at least one of the planes PB4 to PB7.

In the first embodiment, the first modification, and the secondmodification described above, descriptions have been made on a casewhere only two latch circuits SDL and XDL are provided in the senseamplifier unit SAU, but the present disclosure is not limited to this.For example, even when additional latch circuits other than the latchcircuits SDL and XDL are provided, during a write operation in which thelatch circuit XDL is in use, the same effect as described above may beachieved by the pseudo cache program operation described above.

Also, in the second modification described above, descriptions have beenmade on the case where the write command “80h” that instructs a writeoperation on a cell unit CU is issued, but the present disclosure is notlimited to this. For example, “85h” may be issued instead of the writecommand “80h.” “85h” is a write command capable of instructing a writeoperation to a column address of any size in the cell unit CU.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanied by claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor storage device comprising: afirst plane and a second plane each including a memory cell array thatincludes a plurality of memory cells; an input/output circuit configuredto receive data to be written in the memory cells from a controller; anda control circuit, wherein the first plane further includes a firstsense amplifier circuit electrically connected a first memory cell ofthe first plane and a first latch circuit connected in series betweenthe input/output circuit and the first sense amplifier circuit, and thecontrol circuit is configured to carry out a first write operation onthe first memory cell using the first latch circuit in response to afirst command, and while carrying out the first write operation on thefirst memory cell, accept a second command to carryout a second writeoperation on a second memory cell of the second plane before use of thefirst latch circuit during the first write operation has ended.
 2. Thesemiconductor storage device according to claim 1, wherein whilecarrying out the first write operation on the first memory cell andprior to accepting the second command, the control circuitpseudo-releases the first latch circuit.
 3. The semiconductor storagedevice according to claim 1, wherein while carrying out the first writeoperation on the first memory cell and prior to accepting the secondcommand, the control circuit notifies the controller that the controlcircuit is capable of receiving a command without resetting data in thefirst latch circuit.
 4. The semiconductor storage device according toclaim 3, wherein the control circuit is configured to reset the data inthe first latch circuit after the first write operation is completed. 5.The semiconductor storage device according to claim 4, furthercomprising: a third plane including a memory cell array that includes aplurality of memory cells, wherein the second plane further includes asecond sense amplifier circuit electrically connected to the secondmemory cell and a second latch circuit connected in series between theinput/output circuit and the second sense amplifier circuit, and thecontrol circuit is configured to, after accepting the second command andthe first write operation has completed and before use of the secondlatch circuit during the second write operation has ended, accept athird command to carry out a third write operation on a third memorycell in the first plane or the third plane.
 6. The semiconductor storagedevice according to claim 5, wherein while carrying out the second writeoperation on the second memory cell and prior to accepting the thirdcommand, the control circuit pseudo-releases the second latch circuit.7. The semiconductor storage device according to claim 5, wherein whilecarrying out the second write operation on the second memory cell andprior to accepting the third command, the control circuit notifies thecontroller that the control circuit is capable of receiving a commandwithout resetting data in the second latch circuit.
 8. The semiconductorstorage device according to claim 1, wherein while carrying out thefirst write operation on the first memory cell and before use of thefirst latch circuit during the first write operation has ended, thecontrol circuit, in response to a fourth command, stops the first writeoperation and executes a read operation on the first plane or the secondplane.
 9. The semiconductor storage device according to claim 8, whereinthe fourth command is a high priority read command.
 10. Thesemiconductor storage device according to claim 8, wherein whilecarrying out the first write operation on the first memory cell andprior to accepting the fourth command, the control circuitpseudo-releases the first latch circuit.
 11. The semiconductor storagedevice according to claim 1, wherein the first plane further includes asecond latch circuit and if the read operation is executed on the firstplane in response to the fourth command, the control circuit stores readdata in the second latch circuit, followed by transferring of write datastored in the first latch circuit to a sense node of the first senseamplifier circuit, transferring of the read data stored in the secondlatch circuit to the first latch circuit, transferring of the write datatransferred to the sense node to the second latch circuit, transferringof the read data in the first latch circuit to the input/output circuit,and then transferring of the write data in the second latch circuit tothe first latch circuit. a first sense amplifier circuit electricallyconnected a first
 12. The semiconductor storage device according toclaim 1, wherein the second plane further includes a second senseamplifier circuit electrically connected to the second memory cell and asecond latch circuit connected in series between the input/outputcircuit and the second sense amplifier circuit, and the controller isconfigured to, after accepting the second command, upon receiving asixth command before receiving a fifth command to carry out a new writeoperation, stop the first write operation and execute a read operationon the first plane or the second plane.
 13. The semiconductor storagedevice according to claim 12, wherein the sixth command is a highpriority read command.
 14. The semiconductor storage device according toclaim 1, wherein the first command and the second command each includesa set of first type write commands, and a first period required for thesemiconductor storage device to accept the first command and return to aready state is shorter than a second period required for thesemiconductor storage device to accept the second command and return tothe ready state.
 15. A semiconductor storage device comprising: a firstplane and a second plane each including a memory cell array thatincludes a plurality of memory cells; a third plane and a fourth planeeach including a memory cell array that includes a plurality of memorycells; an input/output circuit configured to receive data to be writtenin the memory cells from a controller; and a control circuit configuredto perform a write operation on the first and second planessynchronously in response to first and second commands and a writeoperation on the first and second planes synchronously in response tothird and fourth commands, wherein the first plane further includes afirst sense amplifier circuit electrically connected a first memory cellof the first plane and a first latch circuit connected in series betweenthe input/output circuit and the first sense amplifier circuit, thesecond plane further includes a second sense amplifier circuitelectrically connected a second memory cell of the second plane and asecond latch circuit connected in series between the input/outputcircuit and the second sense amplifier circuit, and the control circuitis configured to carry out the write operation on the first memory celland the second memory cell synchronously using the first latch circuitand the second latch circuit, respectively, and while carrying out thewrite operation, accept the third command before use of the first latchcircuit and the second latch circuit during the write operation hasended.
 16. The semiconductor storage device according to claim 15,wherein while carrying out the write operation on the first memory celland the second memory cell synchronously and prior to accepting thethird command, the control circuit pseudo-releases the first latchcircuit and the second latch circuit.
 17. The semiconductor storagedevice according to claim 15, wherein while carrying out the writeoperation on the first memory cell and the second memory cellsynchronously and prior to accepting the third command, the controlcircuit notifies the controller that the control circuit is capable ofreceiving a command without resetting data in the first latch circuitand the second latch circuit.
 18. The semiconductor storage deviceaccording to claim 17, wherein the control circuit is configured toreset the data in the first latch circuit and the second latch circuitafter the write operation is completed.
 19. A method of performingoperations on a semiconductor storage device having first and secondplanes, each including a plurality of memory cells, and an input/outputcircuit configured to receive data to be written in the memory cellsfrom a controller, wherein the first plane further includes a firstsense amplifier circuit electrically connected a first memory cell ofthe first plane, and a first latch circuit connected in series betweenthe input/output circuit and the first sense amplifier circuit, saidmethod comprising: performing a first operation on the first memory cellusing the first latch circuit in response to a first command; and whilecarrying out the first operation on the first memory cell, accepting asecond command to carry out a second operation on a second memory cellof the second plane before use of the first latch circuit during thefirst operation has ended.
 20. The method of claim 19, wherein the firstoperation is a write operation and the second operation is either awrite operation or a read operation.